Epitaxial and Patterned Wafer Inspection


Raise the efficiency of your production

In the production of epitaxial layers, a variety of different defects can occur due to imperfect substrate quality, process-related contamination and the coating process. For their safe and reliable detection, various sophisticated inspection methods are available. In particular, photoluminescence and DIC microscopy enable the reliable detection of the critical crystallographic defects, which in certain cases can lead to component failure if not detected in time.

Detection of exposure and implantation errors as well as the control of overlay offset and CD values are of crucial importance for the complex manufacturing of microelectronic products. Intego's inspection and measurement systems are also supported by its proprietary CAD based defect detection and wafer yield prediction software. In addition to the classical evaluation algorithms, advanced neural networks for defect detection and classification are also available.


Unpatterned epiwafer inspection

  • simultaneous front and back side inspection
  • fast micro and macro defect inspection
  • inspection with maging techniques like laser scattering, PL and DIC for sub-micron sensitivity
  • detection of pits, bumps, particles, coating defects, color variation, etching residues, haze, stacking faults, triangles, carrots, basal plane dislocations, slip lines, etc.

Patterned wafer inspection

  • inspection of partially processed wafers including laser micro-processing
  • CAD based 2D defect detection and metrology solutions
  • detection of surface and crystallographic defects as well as exposure and implantation errors, overlay errors and die shifts including critical dimension (CD) measurements
  • wafer yield prediction based on advanced defect classification algorithms


Some general performance data

Application

inspection of opaque, semi-transparent and transparent wafers up to 300 mm
solutions for Si, SiC, GaN, GaAs, Ge, sapphire, glass, etc. available


Technology

image acquisition perfectly adapted to the wafer material, size, shape and motion
different focus, magnification and illumination in just one cycle
Inspection options with bright- and darkfield, transmitted light, laser scattering, polarization, photoluminescence, spectrometry, DIC etc.
illumination configuration options from UV to IR
high resolution tool configurations up to 0.1 µm/px available


Handling

standard EFEMs with customized functionality available
open cassette, FOSB, FOUP and/or SMIF based handling, also mixed loading possible
custom-tailored vacuum and edge-grip chuck designs and mini-environment solutions
vacuum or edge-grip handling, flipper, aligner and ID scanner available


Software

proprietary and deep learning defect detection and classification algorithms
advanced manual revaluation of previous defect mappings
advanced wafer defect analysis, review and binning ability
customizable GUI, result visualization, KLARF reporting and SQL data bank solutions
SEMI software interface including SECS/GEM


Further options

If you require an individual solution, Intego offers free-of-charge feasibility studies based on sample parts. The prepared study will include a system design with draft specifications and a price estimate. Do not hesitate to contact us directly.


Your contact for epitaxial and patterned  wafer inspection


Dr. Steffen Oppel
Dr. Steffen Oppel

+49 9131 61082-230

steffen.oppel@intego.de